The In-Plane Dielectric Properties of Graphene Oxide Membrane with Modification from Al3+

This study examines the in-plane dielectric properties of Graphene oxide (GO) membrane with modification from Al3+. The modification from Al3+ potentially impacts the in-plane dielectric properties by interacting with the numerous oxygenated functional groups of the GO sheets. The Al3+ was sourced from aluminum metal foil, chloride salt, and alumina to create three modified GO membrane samples to understand the impacts of different incorporation methods. The three differently sourced Al3+-modified GO (AGO) membranes were compared with an unmodified GO membrane. The impedance and cyclic voltammetry of each membrane were tested to investigate the impact of the Al3+-modification on the in-plane dielectric properties. The results show that Al3+-modification from different sources will influence the electrochemical performance of the capacitor fabricated with the membrane differently.  Understanding the impact of modifications to a GO membrane from Al3+ is important for potential dielectric applications. This study presents the effect of incorporating Al3+ in the GO membrane on the in-plane dielectric properties and demonstrates that the dielectric properties of GO membranes could be controlled to increase their performance in capacitors.